skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations

Abstract

Experimental results on the diffusion of grown-in beryllium (Be) in indium gallium arsenide (In{sub 0.53}Ga{sub 0.47}As) and indium gallium arsenide phosphide (In{sub 0.73}Ga{sub 0.27}As{sub 0.58}P{sub 0.42}) gas source molecular beam epitaxy alloys lattice-matched to indium phosphide (InP) can be successfully explained in terms of a combined kick-out and dissociative diffusion mechanism, involving neutral Be interstitials (Be{sub i}{sup 0}), singly positively charged gallium (Ga), indium (In) self-interstitials (I{sub III}{sup +}) and singly positively charged Ga, In vacancies (V{sub III}{sup +}). A new numerical method of solution to the system of diffusion equations, based on the finite difference approximations and Bairstow's method, is proposed.

Authors:
; ;  [1]
  1. Normandie Université-Université de Rouen-ENSICAEN-UMR 6508 LaMIPS, Laboratoire commun CNRS-NXP-PRESTO-ENSICAEN-UCBN 2, rue de la Girafe BP 5120, F-14079 Caen (France)
Publication Date:
OSTI Identifier:
22305946
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARSENIC COMPOUNDS; BERYLLIUM; DIFFUSION; DIFFUSION EQUATIONS; GALLIUM; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; INDIUM ARSENIDES; INDIUM COMPOUNDS; INDIUM PHOSPHIDES; INTERSTITIALS; MOLECULAR BEAM EPITAXY; PHOSPHORUS COMPOUNDS; QUATERNARY ALLOY SYSTEMS; TERNARY ALLOY SYSTEMS; VACANCIES

Citation Formats

Koumetz, Serge D., E-mail: Serge.Koumetz@univ-rouen.fr, Martin, Patrick, and Murray, Hugues. A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations. United States: N. p., 2014. Web. doi:10.1063/1.4894617.
Koumetz, Serge D., E-mail: Serge.Koumetz@univ-rouen.fr, Martin, Patrick, & Murray, Hugues. A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations. United States. doi:10.1063/1.4894617.
Koumetz, Serge D., E-mail: Serge.Koumetz@univ-rouen.fr, Martin, Patrick, and Murray, Hugues. Sun . "A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations". United States. doi:10.1063/1.4894617.
@article{osti_22305946,
title = {A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations},
author = {Koumetz, Serge D., E-mail: Serge.Koumetz@univ-rouen.fr and Martin, Patrick and Murray, Hugues},
abstractNote = {Experimental results on the diffusion of grown-in beryllium (Be) in indium gallium arsenide (In{sub 0.53}Ga{sub 0.47}As) and indium gallium arsenide phosphide (In{sub 0.73}Ga{sub 0.27}As{sub 0.58}P{sub 0.42}) gas source molecular beam epitaxy alloys lattice-matched to indium phosphide (InP) can be successfully explained in terms of a combined kick-out and dissociative diffusion mechanism, involving neutral Be interstitials (Be{sub i}{sup 0}), singly positively charged gallium (Ga), indium (In) self-interstitials (I{sub III}{sup +}) and singly positively charged Ga, In vacancies (V{sub III}{sup +}). A new numerical method of solution to the system of diffusion equations, based on the finite difference approximations and Bairstow's method, is proposed.},
doi = {10.1063/1.4894617},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 116,
place = {United States},
year = {2014},
month = {9}
}