Electron emitting device and method of making the same
Patent
·
OSTI ID:862814
- Cranbury, NJ
- Hightstown, NJ
- Freehold, NJ
A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.
- Research Organization:
- RCA Labs., Princeton, N.J. (USA)
- Assignee:
- RCA Corporation (New York, NY)
- Patent Number(s):
- US 4019082
- Application Number:
- 05/561,353
- OSTI ID:
- 862814
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/313/257/427/438/
arsenide
crystalline
crystalline gallium
device
electron
electron emitting
emitting
emitting device
exposing
function
gallium
gallium arsenide
indium
indium gallium
layer
material
method
phosphide
portion
reducing
single
single crystal
single crystalline
substrate
surface
therethrough
arsenide
crystalline
crystalline gallium
device
electron
electron emitting
emitting
emitting device
exposing
function
gallium
gallium arsenide
indium
indium gallium
layer
material
method
phosphide
portion
reducing
single
single crystal
single crystalline
substrate
surface
therethrough