Electron emitting device and method of making the same

Patent · Tue Apr 19 00:00:00 EST 1977

OSTI ID:862814

Olsen, Gregory Hammond ^[1]; Martinelli, Ramon Ubaldo ^[2]; Ettenberg, Michael ^[3]

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1. Cranbury, NJ
2. Hightstown, NJ
3. Freehold, NJ

A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.

• Research Organization: RCA Labs., Princeton, N.J. (USA)
• DOE Contract Number: 11-6604
• Assignee: RCA Corporation (New York, NY)
• Patent Number(s): US 4019082
• Application Number: 05/561,353
• OSTI ID: 862814
• Country of Publication: United States
• Language: English

Related Subjects

electron
emitting
device
method
substrate
single
crystalline
gallium
arsenide
surface
layer
indium
phosphide
function
reducing
material
therethrough
exposing
portion
indium gallium
electron emitting
single crystalline
single crystal
gallium arsenide
emitting device
crystalline gallium
/313/257/427/438/