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Method of making indium phosphide devices

Patent ·
OSTI ID:6948801
; ; ; ;

A process for fabricating a device is described comprising substrate and a first region contacting at least a portion of the surface of the substrate. The substrate comprises n-type or p-type indium phosphide and the first region comprising semi-insulating indium phosphide doped with iron and grown by MOCVD and ion-implanting at least a portion of the first region for carrier-activation.

Assignee:
American Telephone and Telegraph Co., AT and T Bell Labs., Murray Hill, NJ
Patent Number(s):
US 4738934
OSTI ID:
6948801
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DOPING
DEPOSITION
DOPED MATERIALS
ELECTRICAL INSULATION
ELEMENTS
FABRICATION
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION IMPLANTATION
IRON
MATERIALS
METALS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACE COATING
TRANSITION ELEMENTS