Reactions in some A/sup III/B/sup V/-Bi systems
Journal Article
·
· Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:6545200
The authors explore the possibility of using bismuth as the solute in the liquid phase epitaxy of semiconductors based on A/sup III/B/sup V/ compounds. They specifically look at the solubility, volatility, melting behavior, phase diagrams, and the tendency toward segregation in systems of bismuth with indium phosphide, gallium arsenide, gallium antimonide, indium antimonide, and indium arsenide.
- Research Organization:
- M.V. Lomonosov Moscow Institute of Fine Chemical Technology, USSR
- OSTI ID:
- 6545200
- Journal Information:
- Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 22:9; ISSN INOMA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
360602 -- Other Materials-- Structure & Phase Studies
ALLOYS
ANTIMONY ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
BISMUTH
DIAGRAMS
ELEMENTS
EPITAXY
GALLIUM ALLOYS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ALLOYS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTERMETALLIC COMPOUNDS
LIQUID PHASE EPITAXY
MELTING
MELTING POINTS
METALS
PHASE DIAGRAMS
PHASE TRANSFORMATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
QUANTITY RATIO
SEGREGATION
SOLUBILITY
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE
VAPOR PRESSURE
VOLATILITY
360102* -- Metals & Alloys-- Structure & Phase Studies
360602 -- Other Materials-- Structure & Phase Studies
ALLOYS
ANTIMONY ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
BISMUTH
DIAGRAMS
ELEMENTS
EPITAXY
GALLIUM ALLOYS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ALLOYS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTERMETALLIC COMPOUNDS
LIQUID PHASE EPITAXY
MELTING
MELTING POINTS
METALS
PHASE DIAGRAMS
PHASE TRANSFORMATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
QUANTITY RATIO
SEGREGATION
SOLUBILITY
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE
VAPOR PRESSURE
VOLATILITY