Impact of total ionizing dose irradiation on electrical property of ferroelectric-gate field-effect transistor

Journal Article · Wed May 28 04:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4878416· OSTI ID:22304378

Yan, S. A.; Xiao, Y. G.; Zhang, W. L.; Ding, H.; Chen, J. W.; Zhou, Y. C. ^[1]; Xiong, Y. ^[2]; Li, Z. ^[1]; Zhao, W.; Guo, H. X. ^[3]

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1. Key Laboratory for Low Dimensional Materials and Application Technology of Ministry of Education (Xiangtan University), Xiangtan, Hunan 411105 (China)
2. The School of Mathematics and Computational Science, Xiangtan University, Xiangtan, Hunan 411105 (China)
3. Northwest Institute of Nuclear Technology, Xi'an, Shanxi 710024 (China)

P-type channel metal-ferroelectric-insulator-silicon field-effect transistors (FETs) with a 300 nm thick SrBi{sub 2}Ta{sub 2}O{sub 9} ferroelectric film and a 10 nm thick HfTaO layer on silicon substrate were fabricated and characterized. The prepared FeFETs were then subjected to {sup 60}Co gamma irradiation in steps of three dose levels. Irradiation-induced degradation on electrical characteristics of the fabricated FeFETs was observed after 1 week annealing at room temperature. The possible irradiation-induced degradation mechanisms were discussed and simulated. All the irradiation experiment results indicated that the stability and reliability of the fabricated FeFETs for nonvolatile memory applications will become uncontrollable under strong irradiation dose and/or long irradiation time.

• OSTI ID: 22304378
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 20 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BISMUTH COMPOUNDS
COBALT 60
ELECTRICAL PROPERTIES
FERROELECTRIC MATERIALS
FIELD EFFECT TRANSISTORS
FILMS
GAMMA RADIATION
LAYERS
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
SILICON
SIMULATION
STABILITY
STRONTIUM COMPOUNDS
SUBSTRATES
TANTALUM