Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate

Journal Article · Mon Nov 30 04:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3269576· OSTI ID:21294494

Park, C H; Im, Seongil ^[1]; Yun, Jungheum; Lee, Gun Hwan ^[2]; Lee, Byoung H; Sung, Myung M ^[3]

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1. Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)
2. Department of Surface Technology, Korea Institute of Material Science, Changwon, Gyeongnam 641-831 (Korea, Republic of)
3. Department of Chemistry, Hanyang University, Seoul 133-791 (Korea, Republic of)

We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgO{sub x} and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgO{sub x} gate operates under low voltage write-erase (WR-ER) pulse of {+-}20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of {+-}70 V for WR and ER states. Both devices stably operated under visible illuminations.

• OSTI ID: 21294494
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 95; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
DEPOSITION
ELECTRIC POTENTIAL
ELECTROCHEMISTRY
ELECTRODES
FABRICATION
FERROELECTRIC MATERIALS
INDIUM COMPOUNDS
LAYERS
NANOSTRUCTURES
POLYVINYLS
PULSES
SEMICONDUCTOR MATERIALS
SILVER COMPOUNDS
SPUTTERING
THIN FILMS
TRANSISTORS
ZINC OXIDES