Electrostatically transparent graphene quantum-dot trap layers for efficient nonvolatile memory

Journal Article · Mon Mar 09 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4914306· OSTI ID:22395724

Kim, Young Rae; Jo, Yong Eun; Sung, Yeo Hyun; Won, Ui Yeon ^[1]; Shin, Yong Seon; Kang, Won Tae

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1. Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

In this study, we have demonstrated nonvolatile memory devices using graphene quantum-dots (GQDs) trap layers with indium zinc oxide (IZO) semiconductor channel. The Fermi-level of GQD was effectively modulated by tunneling electrons near the Dirac point because of limited density of states and weak electrostatic screening in monolayer graphene. As a result, large gate modulation was driven in IZO channel to achieve a subthreshold swing of 5.21 V/dec (300 nm SiO{sub 2} gate insulator), while Au quantum-dots memory shows 15.52 V/dec because of strong electrostatic screening in metal quantum-dots. Together, discrete charge traps of GQDs enable stable performance in the endurance test beyond 800 cycles of programming and erasing. Our study suggests the exciting potential of GQD trap layers to be used for a highly promising material in non-volatile memory devices.

• OSTI ID: 22395724
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 106; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
DENSITY OF STATES
ELECTRONS
FERMI LEVEL
GRAPHENE
INDIUM COMPOUNDS
LAYERS
MEMORY DEVICES
MODULATION
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
TRAPS
TUNNEL EFFECT
ZINC OXIDES