Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)
An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.
- OSTI ID:
- 22257020
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 104; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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