Impact of total ionizing dose irradiation on Pt/SrBi{sub 2}Ta{sub 2}O{sub 9}/HfTaO/Si memory capacitors

Journal Article · Sun Jan 04 23:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4905354· OSTI ID:22395659

Yan, S. A.; Xiao, Y. G.; Zhang, W. L. ^[1]; Zhao, W.; Guo, H. X. ^[2]; Xiong, Y. ^[3]; Ding, H.; Chen, J. W.; Zhou, Y. C. ^[1]

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1. School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105 (China)
2. Northwest Institute of Nuclear Technology, Xi'an, Shanxi 710024 (China)
3. The School of Mathematics and Computational Science, Xiangtan University, Xiangtan, Hunan 411105 (China)

In this work, metal-ferroelectric-insulator-semiconductor (MFIS) structure capacitors with SrBi{sub 2}Ta{sub 2}O{sub 9} (300 nm) as ferroelectric thin film and HfTaO (6 nm, 8 nm, 10 nm, and 12 nm) as insulating buffer layer were proposed and investigated. The prepared capacitors were fabricated and characterized before radiation and then subjected to {sup 60}Co gamma irradiation in steps of two dose levels. Significant irradiation-induced degradation of the electrical characteristics was observed. The radiation experimental results indicated that stability and reliability of as-fabricated MFIS capacitors for nonvolatile memory applications could become uncontrollable under strong irradiation dose and/or long irradiation time.

• OSTI ID: 22395659
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 106; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH COMPOUNDS
CAPACITORS
COBALT 60
FERROELECTRIC MATERIALS
GAMMA RADIATION
HAFNIUM COMPOUNDS
IRRADIATION
LAYERS
PHASE STABILITY
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
SEMICONDUCTOR MATERIALS
STRONTIUM COMPOUNDS
TANTALATES
THIN FILMS