Total-dose radiation-induced degradation of thin film ferroelectric capacitors

Conference · Fri Nov 30 23:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/23.101180· OSTI ID:5933677

Schwank, J R; Nasby, R D; Miller, S L; Rodgers, M S; Dressendorfer, P V ^[1]

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1. Sandia National Labs., Albuquerque, NM (USA)

Thin film PbZr{sub y}Ti{sub 1{minus}y}O{sub 3} (PZT) ferroelectric memories offer the potential for radiation-hardened, high-speed nonvolatile memories with good retention and fatigue properties. In this paper we explore in detail the radiation hardness of PZT ferroelectric capacitors. Ferroelectric capacitors were irradiated using x-ray and Co-60 sources to dose levels up to 16 Mrad(Si). The capacitors were characterized for their memory properties both before and after irradiation. The radiation hardness was process dependent. Three out of four processes resulted in capacitors that showed less than 30% radiation-induced degradation in retained polarization charge and remanent polarization after irradiating to 16 Mrad(Si). On the other hand, one of the processes showed significant radiation-induced degradation in retained polarization charge and remanent polarization at dose levels above 1 Mrad(Si). The decrease in retained polarization charge appears to be due to an alteration of the switching characteristics of the ferroelectric due to changes in the internal fields. The radiation-induced degradation is recoverable by a postirradiation biased anneal and can be prevented entirely if devices are cycled during irradiation. The authors have developed a model to simulate the observed degradation.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5933677
• Report Number(s): CONF-900723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
CAPACITORS
COBALT 60
COBALT ISOTOPES
DOSE RATES
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
EQUIPMENT
FABRICATION
FERROELECTRIC MATERIALS
FILMS
GAMMA RADIATION
HARDENING
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
LEAD COMPOUNDS
MATHEMATICAL MODELS
MEMORY DEVICES
MINUTES LIVING RADIOISOTOPES
NUCLEI
ODD-ODD NUCLEI
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
POLARIZABILITY
PZT
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
RADIOISOTOPES
SIMULATION
THIN FILMS
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRAPPING
X RADIATION
YEARS LIVING RADIOISOT
ZIRCONATES
ZIRCONIUM COMPOUNDS