Direct detection of spontaneous polarization in wurtzite GaAs nanowires

Journal Article · Mon May 26 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4880209· OSTI ID:22300166

Bauer, Benedikt; Hubmann, Joachim; Lohr, Matthias; Reiger, Elisabeth; Bougeard, Dominique; Zweck, Josef ^[1]

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1. Institut für Experimentelle und Angewandte Physik, Universität Regensburg (Germany)

We demonstrate the direct detection of spontaneous polarization in the wurtzite crystal phase of gallium-arsenide (GaAs) nanowires. Using differential phase contrast microscopy (DPC) in a scanning transmission electron microscope, we map the differences in charge distribution between the zinc-blende and wurtzite crystal phases and use twin defects in the zinc-blende phase to quantify the polarization strength. The value of 2.7 × 10{sup −3} C/m{sup 2} found for the polarization strength matches well with theoretical predictions.

• OSTI ID: 22300166
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CHARGE DISTRIBUTION
CRYSTAL DEFECTS
CRYSTALS
DETECTION
FORECASTING
GALLIUM ARSENIDES
NANOWIRES
POLARIZATION
QUANTUM WIRES
TRANSMISSION ELECTRON MICROSCOPY
ZINC SULFIDES