Electronic and structural characteristics of zinc-blende wurtzite biphasic homostructure GaN nanowires

Jacobs, Benjamin W.; Ayres, Virginia M.; Petkov, Mihail P.; Halpern, Joshua B.; He, Maoqi; Baczewski, Andrew D.; McElroy, Kaylee; Crimp, Martin A.; Zhang, Jiaming; Shaw, Harry C.

doi:10.1021/nl062871y

Title: Electronic and structural characteristics of zinc-blende wurtzite biphasic homostructure GaN nanowires

Journal Article · Sat Apr 07 00:00:00 EDT 2007 · Nano Letters

DOI:https://doi.org/10.1021/nl062871y· OSTI ID:1249081

Jacobs, Benjamin W. ^[1]; Ayres, Virginia M. ^[1]; Petkov, Mihail P. ^[2]; Halpern, Joshua B. ^[3]; He, Maoqi ^[3]; Baczewski, Andrew D. ^[1]; McElroy, Kaylee ^[1]; Crimp, Martin A. ^[1]; Zhang, Jiaming ^[1]; Shaw, Harry C. ^[4]

Michigan State Univ., East Lansing, MI (United States)
Jet Propulsion Lab., Pasadena, CA (United States)
Howard Univ., Washington, DC (United States)
NASA Goddard Space Flight Center (GSFC), Greenbelt, MD (United States)

Here, we report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure the wurtzite and zinc-blende band gaps. High-resolution transmission electron microscopy was used to identify distinct wurtzite and zinc-blende crystalline phases within single nanowires through the use of selected area electron diffraction, electron dispersive spectroscopy, electron energy loss spectroscopy, and fast Fourier transform techniques. A mechanism for growth is identified.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1249081

Report Number(s):: SAND-2016-1054J; 619146

Journal Information:: Nano Letters, Vol. 7, Issue 5; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 35 works

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Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy Fedorov, V. V.; Bolshakov, A. D.; Kirilenko, D. A. CrystEngComm, Vol. 20, Issue 24 https://doi.org/10.1039/c8ce00348c	journal	January 2018
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