Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

Jacobs, Benjamin W.; Ayres, Virginia M.; Stallcup, Richard E.; Hartman, Alan; Tupta, Mary Ann; Baczewski, Andrew David; Crimp, Martin A.; Halpern, Joshua B.; He, Maoqi; Shaw, Harry C.

doi:10.1088/0957-4484/18/47/475710

Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

Journal Article · Fri Oct 19 00:00:00 UTC 2007 · Nanotechnology

DOI:https://doi.org/10.1088/0957-4484/18/47/475710· OSTI ID:1252695

Jacobs, Benjamin W. ^[1]; Ayres, Virginia M. ^[1]; Stallcup, Richard E. ^[2]; Hartman, Alan ^[2]; Tupta, Mary Ann ^[3]; Baczewski, Andrew David ^[1]; Crimp, Martin A. ^[1]; Halpern, Joshua B. ^[4]; He, Maoqi ^[4]; Shaw, Harry C. ^[5]

Michigan State Univ., East Lansing, MI (United States)
Zyvex Instruments, Richardson, TX (United States)
Keithley Instruments, Inc., Cleveland, OH (United States)
Howard Univ., Washington, D.C. (United States)
NASA Goddard Space Flight Center, Greenbelt, MD (United States)

Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1252695

Report Number(s):: SAND--2016-1052J; 619144

Journal Information:: Nanotechnology, Journal Name: Nanotechnology Journal Issue: 47 Vol. 18; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

References (25)

Nanoscale Ultraviolet-Light-Emitting Diodes Using Wide-Bandgap Gallium Nitride Nanorods Kim, H. -M.; Kang, T. W.; Chung, K. S. Advanced Materials, Vol. 15, Issue 78 https://doi.org/10.1002/adma.200304554	journal	April 2003
The fabrication technique and electrical properties of a free-standing GaN nanowire Yu, H. Y.; Kang, B. H.; Park, C. W. Applied Physics A, Vol. 81, Issue 2 https://doi.org/10.1007/s00339-005-3276-3	journal	July 2005
Growth of GaN nanowires by direct reaction of Ga with NH3 He, Maoqi; Zhou, Peizhen; Mohammad, S. Noor Journal of Crystal Growth, Vol. 231, Issue 3 https://doi.org/10.1016/S0022-0248(01)01466-X	journal	October 2001
Investigations of heavy ion irradiation of gallium nitride nanowires and nanocircuits Ayres, V. M.; Jacobs, B. W.; Englund, M. E. Diamond and Related Materials, Vol. 15, Issue 4-8 https://doi.org/10.1016/j.diamond.2005.11.055	journal	April 2006
Electronic Transport in Mesoscopic Systems Datta, Supriyo Cambridge University Press https://doi.org/10.1017/CBO9780511805776	book	January 2013
Observation of Rotational Isomers I: A ZEKE and Hole-Burning Spectroscopy Study of 3-Methoxyphenol Ullrich, Susanne; Geppert, Wolf D.; Dessent, Caroline E. H. The Journal of Physical Chemistry A, Vol. 104, Issue 51 https://doi.org/10.1021/jp0024470	journal	December 2000
Gallium Nitride Nanowire Nanodevices Huang, Yu; Duan, Xiangfeng; Cui, Yi Nano Letters, Vol. 2, Issue 2 https://doi.org/10.1021/nl015667d	journal	February 2002
Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices Zhong, Zhaohui; Qian, Fang; Wang, Deli Nano Letters, Vol. 3, Issue 3 https://doi.org/10.1021/nl034003w	journal	March 2003
Disorder Effects in Focused-Ion-Beam-Deposited Pt Contacts on GaN Nanowires Nam, C. Y.; Tham, D.; Fischer, J. E. Nano Letters, Vol. 5, Issue 10 https://doi.org/10.1021/nl0515697	journal	October 2005
Electronic and Structural Characteristics of Zinc-Blende Wurtzite Biphasic Homostructure GaN Nanowires Jacobs, Benjamin W.; Ayres, Virginia M.; Petkov, Mihail P. Nano Letters, Vol. 7, Issue 5 https://doi.org/10.1021/nl062871y	journal	May 2007
Crystallographic alignment of high-density gallium nitride nanowire arrays Kuykendall, Tevye; Pauzauskie, Peter J.; Zhang, Yanfeng Nature Materials, Vol. 3, Issue 8, p. 524-528 https://doi.org/10.1038/nmat1177	journal	July 2004
Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3 He, Maoqi; Minus, Indira; Zhou, Piezhen Applied Physics Letters, Vol. 77, Issue 23 https://doi.org/10.1063/1.1329863	journal	December 2000
Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition Kim, Jae-Ryoung; So, Hye Mi; Park, Jong Wan Applied Physics Letters, Vol. 80, Issue 19 https://doi.org/10.1063/1.1478158	journal	May 2002
Band parameters for nitrogen-containing semiconductors Vurgaftman, I.; Meyer, J. R. Journal of Applied Physics, Vol. 94, Issue 6 https://doi.org/10.1063/1.1600519	journal	September 2003
GaN nanowire lasers with low lasing thresholds Gradečak, Silvija; Qian, Fang; Li, Yat Applied Physics Letters, Vol. 87, Issue 17 https://doi.org/10.1063/1.2115087	journal	October 2005
Specific contact resistivity of nanowire devices Stern, E.; Cheng, G.; Young, M. P. Applied Physics Letters, Vol. 88, Issue 5 https://doi.org/10.1063/1.2163454	journal	January 2006
Gallium nitride nanowire nonvolatile memory device Cha, Ho-Young; Wu, Huaqiang; Chae, Soodoo Journal of Applied Physics, Vol. 100, Issue 2 https://doi.org/10.1063/1.2216488	journal	July 2006
Heteroepitaxial wurtzite and zinc‐blende structure GaN grown by reactive‐ion molecular‐beam epitaxy: Growth kinetics, microstructure, and properties Powell, R. C.; Lee, N. ‐E.; Kim, Y. ‐W. Journal of Applied Physics, Vol. 73, Issue 1 https://doi.org/10.1063/1.353882	journal	January 1993
Electrical characterization of single GaN nanowires Stern, E.; Cheng, G.; Cimpoiasu, E. Nanotechnology, Vol. 16, Issue 12 https://doi.org/10.1088/0957-4484/16/12/037	journal	October 2005
Contact characteristics in GaN nanowire devices Ham, Moon-Ho; Choi, Ji-Hyuk; Hwang, Wonseok Nanotechnology, Vol. 17, Issue 9 https://doi.org/10.1088/0957-4484/17/9/021	journal	March 2006
Native defects in gallium nitride Bogusl/awski, P.; Briggs, E. L.; Bernholc, J. Physical Review B, Vol. 51, Issue 23 https://doi.org/10.1103/PhysRevB.51.17255	journal	June 1995
Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes Martel, R.; Derycke, V.; Lavoie, C. Physical Review Letters, Vol. 87, Issue 25 https://doi.org/10.1103/PhysRevLett.87.256805	journal	December 2001
Carbon Nanotubes as Schottky Barrier Transistors Heinze, S.; Tersoff, J.; Martel, R. Physical Review Letters, Vol. 89, Issue 10 https://doi.org/10.1103/PhysRevLett.89.106801	journal	August 2002
Carbon nanotube electronics Appenzeller, J.; Knoch, J.; Martel, R. IEEE Transactions on Nanotechnology, Vol. 1, Issue 4 https://doi.org/10.1109/TNANO.2002.807390	journal	December 2002
Logic Gates and Computation from Assembled Nanowire Building Blocks Huang, Y. Science, Vol. 294, Issue 5545 https://doi.org/10.1126/science.1066192	journal	November 2001

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