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Title: Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

Journal Article · · Nanotechnology
 [1];  [1];  [2];  [2];  [3];  [1];  [1];  [4];  [4];  [5]
  1. Michigan State Univ., East Lansing, MI (United States)
  2. Zyvex Instruments, Richardson, TX (United States)
  3. Keithley Instruments, Inc., Cleveland, OH (United States)
  4. Howard Univ., Washington, D.C. (United States)
  5. NASA Goddard Space Flight Center, Greenbelt, MD (United States)

Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1252695
Report Number(s):
SAND-2016-1052J; 619144
Journal Information:
Nanotechnology, Vol. 18, Issue 47; ISSN 0957-4484
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

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