Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs
Journal Article
·
· Nanotechnology
- Michigan State Univ., East Lansing, MI (United States)
- Zyvex Instruments, Richardson, TX (United States)
- Keithley Instruments, Inc., Cleveland, OH (United States)
- Howard Univ., Washington, D.C. (United States)
- NASA Goddard Space Flight Center, Greenbelt, MD (United States)
Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1252695
- Report Number(s):
- SAND-2016-1052J; 619144
- Journal Information:
- Nanotechnology, Vol. 18, Issue 47; ISSN 0957-4484
- Publisher:
- IOP PublishingCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 7 works
Citation information provided by
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