Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

Journal Article · Mon Apr 28 04:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4872246· OSTI ID:22273533

Dvoretsky, S. A.; Mikhailov, N. N.; Varavin, V. S. ^[1]; Mynbaev, K. D. ^[2]; Fitsych, O. I. ^[3]; Pociask-Bialy, M.; Sheregii, E. ^[4]; Voitsekhovskii, A. V. ^[5]

---

1. A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk 630090 (Russian Federation)
2. Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation)
3. P. Sahaydachnyi Army Academy, Lviv 79012 (Ukraine)
4. Center of Microelectronics and Nanotechnology, Rzeszów University, Rzeszów 35-310 (Poland)
5. National Research Tomsk State University, Tomsk 634050 (Russian Federation)

A defect study was performed on molecular beam epitaxy-grown HgCdTe films in situ doped with arsenic. Doping was performed from either effusion cell or cracker cell, and studied were both as-grown samples and samples subjected to arsenic activation annealing. Electrical properties of the films were investigated with the use of ion milling as a means of “stirring” defects in the material. As a result of the study, it was confirmed that the most efficient incorporation of electrically active arsenic occurs at the cracking zone temperature of 700 °C. Interaction between arsenic and tellurium during the growth was observed and is discussed in the paper.

• OSTI ID: 22273533
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 16 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ARSENIC
CADMIUM TELLURIDES
CRYSTAL DEFECTS
DIFFUSION
DOPED MATERIALS
ELECTRICAL PROPERTIES
MERCURY COMPOUNDS
MOLECULAR BEAM EPITAXY
THIN FILMS