GaAs films grown by vacuum chemical epitaxy using thermally precracked trimethyl-arsenic

Journal Article · Wed Jul 01 04:00:00 EDT 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339145· OSTI ID:6545332

Fraas, L M; McLeod, P S; Weiss, R E; Partain, L D; Cape, J A

Trimethyl-arsenic (TMAs) is used as a source of arsenic for GaAs film growth. In the process used, vacuum chemical epitaxy, TMAs is thermally decomposed into arsenic upstream in a hot cracker furnace. The arsenic and stable hydrocarbons are then transported in vacuum without condensation to the epitaxial growth zone. The hole carrier concentration and carbon content in grown films are studied via Hall, electrochemical profile, and secondary ion mass spectroscopy as a function of cracker furnace design. It is shown that when the TMAs decomposition efficiency is poor, the carbon content can be as high as 10/sup 19//cm/sup 3/ but for a more efficient cracker, the carbon content can be reduced into the 10/sup 16//cm/sup 3/ range. Toxic injury hazards can be reduced substantially by substituting TMAs for the more widely used arsine in GaAs growth systems.

• Research Organization: Chevron Research Company, Richmond, California 94802
• OSTI ID: 6545332
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 62:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DECOMPOSITION
DEPOSITION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
PNICTIDES
SPECTROSCOPY
SURFACE COATING
VAPOR PHASE EPITAXY