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Modulation-doped HgCdTe

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.576117· OSTI ID:6485453
At North Carolina State University, we have recently employed photoassisted molecular-beam epitaxy (MBE) to successfully prepare p- and n-type modulation-doped HgCdTe. The modulation-doped HgCdTe samples were grown on lattice-matched (100) CdZnTe substrates cut from boules grown at Santa Barbara Research Center. In this paper, we report details of the MBE growth experiments and describe the structural, optical, and electrical properties that this new infrared quantum alloy of HgCdTe possesses.
Research Organization:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
OSTI ID:
6485453
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:2; ISSN JVTAD
Country of Publication:
United States
Language:
English