The growth and characterization of HgTe and HgCdTe using methylalylltelluride

Journal Article · Thu Mar 01 00:00:00 EST 1990 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)

DOI:https://doi.org/10.1116/1.576961· OSTI ID:6860741

Bhat, I B; Ehsani, H; Ghandhi, S K ^[1]

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1. Electrical, Computer, Troy, New York 12180 (USA) Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180 (US)

HgTe and HgCdTe layers have been grown by organometallic vapor phase epitaxy at low temperature by using methylallyltelluride (MATe), dimethylcadmium (DMCd) and elemental mercury. Use of MATe enabled the growth of layers in the 250--320 {degree}C range, which is 50 {degree}C lower than the growth temperature when diisopropyltelluride (DIPTe) is used, for the same growth rate. The layers were characterized by double crystal x-ray diffraction, Fourier-transform infrared (FTIR) spectroscopy, and by low temperature Hall measurements. Growth below 340 {degree}C resulted in featureless HgTe layers. HgTe layers, grown on CdTe, are misoriented with respect to the substrate by about 60--150 arc s. This tilting was not observed when CdZnTe substrates, to which there is a better lattice match, were used. The high quality of low temperature grown HgTe is demonstrated by the very narrow (27 arc s) full width at half-maximum (FWHM) of x-ray diffraction for layers grown on CdZnTe substrates. HgCdTe layers, grown at 320 {degree}C, showed well resolved interference fringes even for thin layers indicating the presence of an abrupt interface with the substrate. As grown layers were {ital n}-type, with the best mobility of 40 000 cm{sup 2} /V s at 40 K for a layer with composition {ital x} of 0.23.

• OSTI ID: 6860741
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Vol. 8:2; ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
SUBSTRATES
MERCURY TELLURIDES
CHEMICAL REACTIONS
DIFFRACTION METHODS
FABRICATION
HALL EFFECT
MEASURING METHODS
PRESSURE CONTROL
TEMPERATURE CONTROL
VAPOR PHASE EPITAXY
CADMIUM COMPOUNDS
CHALCOGENIDES
CONTROL
EPITAXY
MERCURY COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
360603* - Materials- Properties