Arsenic complexes optical signatures in As-doped HgCdTe

Journal Article · Mon Apr 08 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4801500· OSTI ID:22162841

Gemain, F.; Robin, I. C.; Brochen, S.; Ballet, P.; Gravrand, O.; Feuillet, G. ^[1]

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1. CEA-LETI Minatec Campus, 17 rue des Martyrs, 38000 Grenoble (France)

In this paper, the optical signatures of arsenic complexes in As-doped HgCdTe samples grown by molecular beam epitaxy are clearly identified using comparison between photoluminescence spectra, Extended X-Ray Absorption Fine Structure, and Hall measurements. The ionization energies of the different complexes are measured both by photoluminescence and Hall measurements.

• OSTI ID: 22162841
• Journal Information: Applied Physics Letters, Vol. 102, Issue 14; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ABSORPTION SPECTROSCOPY
ARSENIC ADDITIONS
ARSENIC COMPLEXES
CADMIUM COMPOUNDS
COMPARATIVE EVALUATIONS
DOPED MATERIALS
FINE STRUCTURE
HALL EFFECT
IONIZATION
MERCURY COMPOUNDS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SPECTRA
TELLURIUM COMPOUNDS
TERNARY ALLOY SYSTEMS
X RADIATION
X-RAY SPECTROSCOPY