Arsenic {delta}-doped HgTe/HgCdTe superlattices grown by molecular beam epitaxy

Journal Article · Mon Feb 25 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2888967· OSTI ID:21120560

Tsen, G K. O.; Musca, C A; Dell, J M; Antoszewski, J; Faraone, L ^[1]; Becker, C R ^[2]

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1. School of EECE, University of Western Australia, Crawley, Western Australia 6009 (Australia)
2. Physikalisches Institut der Universitat Wuerzburg, Wuerzburg 97070 (Germany)

Arsenic incorporation in HgTe/Hg{sub 0.05}Cd{sub 0.95}Te superlattices grown by molecular beam epitaxy (MBE) is reported. The incorporation was carried out by a {delta}-doping approach where arsenic was incorporated during MBE growth as acceptors. The superlattices were characterized via high resolution x-ray diffraction, Fourier transform infrared spectroscopy, secondary ion mass spectrometry, and magnetotransport Hall measurements coupled with the quantitative mobility spectrum analysis algorithm.

• OSTI ID: 21120560
• Journal Information: Applied Physics Letters, Vol. 92, Issue 8; Other Information: DOI: 10.1063/1.2888967; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALGORITHMS
ARSENIC
CADMIUM TELLURIDES
CARRIER MOBILITY
CRYSTAL GROWTH
DOPED MATERIALS
FOURIER TRANSFORM SPECTROMETERS
FOURIER TRANSFORMATION
HALL EFFECT
INFRARED SPECTRA
ION MICROPROBE ANALYSIS
MASS SPECTRA
MASS SPECTROSCOPY
MERCURY TELLURIDES
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
SUPERLATTICES
X-RAY DIFFRACTION