Impurity doping of HgTe--CdTe superlattices during growth by molecular-beam epitaxy
We demonstrate the use of In and Ag as n- and p-type dopants, respectively, to controllably dope (100)-oriented HgTe--CdTe superlattices during molecular-beam epitaxial (MBE) growth. When normalized by the superlattice growth rate, the low-temperature Hall-carrier concentrations of both In- and Ag-doped superlattices are shown to have an exponential dependence on the respective effusion-cell temperatures in the electron and hole concentration ranges of approx.10/sup 16/ to 10/sup 18/ cm/sup -3/ . The upper limit on the diffusion coefficient for In at the low MBE growth temperature of approx.160 /sup 0/C is determined to be 5 x 10/sup -15/ cm/sup 2/ /s by use of secondary-ion mass spectrometry. Hall-effect and current--voltage measurements verify that the combination of In and Ag doping allows the formation of p--n electrical junctions. These results provide the first evidence of p--n junction formation in a HgTe--CdTe superlattice.
- Research Organization:
- McDonnell Douglas Research Laboratories, St. Louis, Missouri 63166
- OSTI ID:
- 6759575
- Journal Information:
- J. Vac. Sci. Technol., A; (United States), Vol. 7:2
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CADMIUM TELLURIDES
CRYSTAL GROWTH
MERCURY TELLURIDES
CRYSTAL DOPING
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
HALL EFFECT
INDIUM ADDITIONS
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
SILVER ADDITIONS
SUPERLATTICES
ALLOYS
CADMIUM COMPOUNDS
CHALCOGENIDES
ELECTRICAL PROPERTIES
EPITAXY
INDIUM ALLOYS
MERCURY COMPOUNDS
PHYSICAL PROPERTIES
SILVER ALLOYS
SPECTROSCOPY
TELLURIDES
TELLURIUM COMPOUNDS
360104* - Metals & Alloys- Physical Properties