Properties of HgTe-CdTe superlattices grown on GaAs substrates by molecular beam epitaxy

Journal Article · · Appl. Phys. Commun.; (United States)

OSTI ID:6263234

Leopold, D J; Broerman, J G; Peterman, D J; Morris, B J; Wroge, M L

(100)- and (111)-oriented HgTe-CdTe superlattices were grown on (100)-oriented GaAs by molecular beam epitaxy. Low substrate temperatures (150-170/sup 0/C) were required to minimize interdiffusion and improve crystal quality. High resolution x-ray step scans of the superlattice diffraction region show narrow, distinct principle and satellite peaks out to sixth order. The intensities and positions of these peaks are theoretically fitted to quantitatively determine superlattice period, HgTe/CdTe layer thickness ratios, strain, and statistical variation in layer thicknesses. Optical absorption spectra were measured as a function of temperature. The highest crystal quality superlattices exhibit sharp absorption edges with positive temperature coefficients in reasonable agreement with theory. Many superlattices exhibit addition higher energy absorption features with temperature dependences similar to the lower energy fundamental absorption edge. The higher energy absorption features are associated with optical transitions involving higher order (n = 2,3) superlattive minibands. These superlattices have high electron mobilities at low temperatures. The effects of doping on the electrical properties will be discussed.

• Research Organization: McDonnel Douglas Research Labs., St. Louis, MO
• OSTI ID: 6263234
• Journal Information: Appl. Phys. Commun.; (United States), Journal Name: Appl. Phys. Commun.; (United States) Vol. 7:1-2; ISSN APCOD
• Country of Publication: United States
• Language: English

Related Subjects

656002* -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL GROWTH
DATA
DIFFRACTION
ELECTRICAL PROPERTIES
EPITAXY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
MEDIUM TEMPERATURE
MERCURY COMPOUNDS
MERCURY TELLURIDES
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPACITY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SUBSTRATES
SUPERLATTICES
TELLURIDES
TELLURIUM COMPOUNDS
X-RAY DIFFRACTION