Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Possible resolution of the valence-band offset controversy in HgTe/CdTe superlattices

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.576196· OSTI ID:6445449
The valence-band offset controversy in HgTe/CdTe superlattices can be simply resolved by showing, as we do here, that a large offset value (..lambda..>300 meV) is indeed consistent with the magneto-optical data of Berroir et al. (Phys. Rev. B 34, 891 (1986)). The superlattice (100 A HgTe/36 A CdTe) becomes semimetallic (SM) when ..lambda.. is increased from small values, but reverts to semiconducting (SC) behavior for ..lambda..>300 meV. The band gap in this new regime occurs at the superlattice Brillouin zone face. The sensitivity to layer thicknesses of such SC..-->..SM..-->..SC transitions is discussed and experiments suggested.
Research Organization:
Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
OSTI ID:
6445449
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:2; ISSN JVTAD
Country of Publication:
United States
Language:
English

Similar Records

Electron transport and cyclotron resonance in (211)-oriented HgTe--CdTe superlattices
Journal Article · Wed Feb 28 23:00:00 EST 1990 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) · OSTI ID:6860680

Photoluminescence of HgTe-CdTe superlattices: Comparison of theory and experiment
Journal Article · Fri Jul 01 00:00:00 EDT 1988 · J. Appl. Phys.; (United States) · OSTI ID:5310431

Determination of a natural valence-band offset: The case of HgTe-CdTe
Journal Article · Mon Jun 15 00:00:00 EDT 1987 · Phys. Rev. Lett.; (United States) · OSTI ID:6510942