Arsenic activation in molecular beam epitaxy grown, in situ doped HgCdTe(211)

Journal Article · Mon May 23 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1940119· OSTI ID:20702399

Boieriu, P; Grein, C H; Jung, H S; Garland, J; Nathan, V ^[1]

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1. EPIR Technologies Inc., Bolingbrook, Illinois 60440 (United States)

Photovoltaic p-n junctions are the most significant active components of both current infrared photodetectors and advanced ones being developed. It is of the utmost importance to control both p- and n-type extrinsic doping. This letter addresses the issue of activating arsenic as a p-type dopant of Hg{sub 1-x}Cd{sub x}Te at temperatures sufficiently low that the integrity of p-n junctions and the intrinsic advantages of molecular beam epitaxy as a growth technique will not be compromised. The p-type activation of arsenic in (211)B Hg{sub 1-x}Cd{sub x}Te is reported after a two-stage anneal at temperatures below 300 deg. C for Cd compositions suitable for the sensing of long wavelength infrared radiation.

• OSTI ID: 20702399
• Journal Information: Applied Physics Letters, Vol. 86, Issue 21; Other Information: DOI: 10.1063/1.1940119; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ARSENIC
CADMIUM COMPOUNDS
CRYSTAL GROWTH
DOPED MATERIALS
INFRARED RADIATION
MERCURY COMPOUNDS
MOLECULAR BEAM EPITAXY
P-N JUNCTIONS
PHOTODETECTORS
SEMICONDUCTOR MATERIALS
TELLURIUM COMPOUNDS