Low-level extrinsic doping for p- and n-type (100) HgCdTe grown by molecular-beam epitaxy

Journal Article · Wed Mar 01 00:00:00 EST 1989 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.576200· OSTI ID:6445410

Temofonte, T A; Noreika, A J; Bevan, M J; Emtage, P R; Seiler, C F; Mitra, P

Doping control of (100)-oriented Hg/sub 1-//sub x/Cd/sub x/Te layers grown by molecular-beam epitaxy has been achieved in situ by stoichiometric adjustment and by extrinsic acceptor and donor incorporation. Silver and indium were found to be relatively efficient acceptor and donor dopants, respectively, at concentrations lower than previously reported for HgCdTe. Modeling results show that these levels are required for high-performance wide-band-gap p-type on narrow-band-gap n-type heterojunction detectors. Classic variable-temperature Hall behavior is typically observed. However, low temperatures (<77 K) and high fields (to 50 kG) have been used to characterize HgCdTe films, especially p-type ones, which can exhibit anomalous behavior particularly for low doping levels.

• Research Organization: Westinghouse RandD Center, Pittsburgh, Pennsylvania 15235
• OSTI ID: 6445410
• Journal Information: J. Vac. Sci. Technol., A; (United States), Vol. 7:2
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
COATINGS
CRYSTAL GROWTH
MERCURY TELLURIDES
BINARY ALLOY SYSTEMS
CRYSTAL DOPING
HETEROJUNCTIONS
LAYERS
MATHEMATICAL MODELS
MOLECULAR BEAM EPITAXY
SUBSTRATES
ALLOY SYSTEMS
CADMIUM COMPOUNDS
CHALCOGENIDES
EPITAXY
JUNCTIONS
MERCURY COMPOUNDS
SEMICONDUCTOR JUNCTIONS
TELLURIDES
TELLURIUM COMPOUNDS
360104* - Metals &amp; Alloys- Physical Properties