Low-level extrinsic doping for p- and n-type (100) HgCdTe grown by molecular-beam epitaxy

Journal Article · Wed Mar 01 04:00:00 EST 1989 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.576200· OSTI ID:6445410

Temofonte, T A; Noreika, A J; Bevan, M J; Emtage, P R; Seiler, C F; Mitra, P

Doping control of (100)-oriented Hg/sub 1-//sub x/Cd/sub x/Te layers grown by molecular-beam epitaxy has been achieved in situ by stoichiometric adjustment and by extrinsic acceptor and donor incorporation. Silver and indium were found to be relatively efficient acceptor and donor dopants, respectively, at concentrations lower than previously reported for HgCdTe. Modeling results show that these levels are required for high-performance wide-band-gap p-type on narrow-band-gap n-type heterojunction detectors. Classic variable-temperature Hall behavior is typically observed. However, low temperatures (<77 K) and high fields (to 50 kG) have been used to characterize HgCdTe films, especially p-type ones, which can exhibit anomalous behavior particularly for low doping levels.

• Research Organization: Westinghouse RandD Center, Pittsburgh, Pennsylvania 15235
• OSTI ID: 6445410
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:2; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals &amp; Alloys-- Physical Properties
ALLOY SYSTEMS
BINARY ALLOY SYSTEMS
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
COATINGS
CRYSTAL DOPING
CRYSTAL GROWTH
EPITAXY
HETEROJUNCTIONS
JUNCTIONS
LAYERS
MATHEMATICAL MODELS
MERCURY COMPOUNDS
MERCURY TELLURIDES
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR JUNCTIONS
SUBSTRATES
TELLURIDES
TELLURIUM COMPOUNDS