Electrical properties of intrinsic p-type shallow levels in HgCdTe grown by molecular-beam epitaxy in the (111)B orientation

Journal Article · Wed Mar 01 04:00:00 EST 1989 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.576118· OSTI ID:6445512

Boukerche, M; Sivananthan, S; Wijewarnasuriya, P S; Sou, I K; Faurie, J P

The electrical properties of the unintentionally doped p-type HgCdTe material as grown in the (111)B orientation by molecular-beam epitaxy are revised. The analysis of the Hall coefficient in the whole temperature range with a model based on the two-band nonparabolic Kane model, a fully ionized compensating donor concentration, and two independent discrete acceptor levels is presented. The donor compensation is found to be much lower than before, in agreement with the latest study of extrinsic doping by indium. A defect level with an energy of 30 to 50 meV is found necessary to explain properly some of the crystals' data. The results of a three-carrier band modeling of the Hall constant versus field are also presented for one sample and are in very good agreement with the expected band structure of the material. These results show that important improvements have been made recently in the control of stoichiometry during growth.

• Research Organization: Department of Physics, The University of Illinois at Chicago, Chicago, Illinois 60680
• OSTI ID: 6445512
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:2; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
BAND THEORY
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
EPITAXY
HALL EFFECT
MATERIALS
MERCURY COMPOUNDS
MERCURY TELLURIDES
MOLECULAR BEAM EPITAXY
P-TYPE CONDUCTORS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
TELLURIDES
TELLURIUM COMPOUNDS