Effective dopant activation by susceptor-assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon

Journal Article · Sat Dec 28 04:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4858404· OSTI ID:22267772

Zhao, Zhao; Vemuri, Rajitha N. P.; David Theodore, N. ^[1]; Lu, Wei; Lau, S. S. ^[2]; Lanz, A. ^[3]

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1. CHD-Fab, Freescale Semiconductor Inc., 1300 N. Alma School Rd., Chandler, Arizona 85224 (United States)
2. Department of Electrical Engineering, University of California, San Diego, California 92093 (United States)
3. Department of Mathematics, Norfolk State University, Norfolk, Virginia 23504 (United States)

Rapid processing and reduced end-of-range diffusion result from susceptor-assisted microwave (MW) annealing, making this technique an efficient processing alternative for electrically activating dopants within ion-implanted semiconductors. Sheet resistance and Hall measurements provide evidence of electrical activation. Susceptor-assisted MW annealing, of ion-implanted Si, enables more effective dopant activation and at lower temperatures than required for rapid thermal annealing (RTA). Raman spectroscopy and ion channeling analyses are used to monitor the extent of ion implantation damage and recrystallization. The presence and behavior of extended defects are monitored by cross-section transmission electron microscopy. Phosphorus implanted Si samples experience effective electrical activation upon MW annealing. On the other hand, when boron implanted Si is MW annealed, the growth of extended defects results in reduced crystalline quality that hinders the electrical activation process. Further comparison of dopant diffusion resulting from MW annealing and rapid thermal annealing is performed using secondary ion mass spectroscopy. MW annealed ion implanted samples show less end-of-range diffusion when compared to RTA samples. In particular, MW annealed P{sup +} implanted samples achieve no visible diffusion and equivalent electrical activation at a lower temperature and with a shorter time-duration of annealing compared to RTA. In this study, the peak temperature attained during annealing does not depend on the dopant species or dose, for susceptor-assisted MW annealing of ion-implanted Si.

• OSTI ID: 22267772
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 24 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BORON
CHANNELING
CROSS SECTIONS
DOPED MATERIALS
HIGH ROOMS
ION IMPLANTATION
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
MICROWAVE RADIATION
PHOSPHORUS
PHOSPHORUS IONS
RAMAN SPECTROSCOPY
RECRYSTALLIZATION
SEMICONDUCTOR MATERIALS
SILICON
TRANSMISSION ELECTRON MICROSCOPY