Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma

Journal Article · Thu Feb 20 04:00:00 EST 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4866620· OSTI ID:22266052

Okada, H. ^[1]; Kato, M.; Ishimaru, T.; Sekiguchi, H.; Wakahara, A. ^[2]; Furukawa, M. ^[3]

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1. Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580 (Japan)
2. Department of Electrical- and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580 (Japan)
3. Aries Research Group, 1-25-11 Fujizuka, Kohoku-ku, Yokohama 222-0012 (Japan)

Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma is investigated. Feasibility of precursors of triethylsilane (TES) and bis(dimethylamino)dimethylsilane (BDMADMS) is discussed based on a calculation of bond energies by computer simulation. Refractive indices of 1.81 and 1.71 are obtained for deposited films with TES and BDMADMS, respectively. X-ray photoelectron spectroscopy (XPS) analysis of the deposited film revealed that TES-based film coincides with the stoichiometric thermal silicon nitride.

• OSTI ID: 22266052
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1585; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL VAPOR DEPOSITION
COMPUTERIZED SIMULATION
DEPOSITS
FILMS
NITROGEN
ORGANOMETALLIC COMPOUNDS
PLASMA SURFACE WAVES
PRECURSOR
REFRACTIVE INDEX
SILICON NITRIDES
X-RAY PHOTOELECTRON SPECTROSCOPY