Plasma enhanced chemical vapor deposition of silicon nitride from novel organosilanes

Book · Sat Dec 31 04:00:00 EST 1994

OSTI ID:106192

Grow, J M; Levy, R A; Yu, Y; Shih, K T ^[1]

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1. New Jersey Inst. of Tech., Newark, NJ (United States)

The environmentally benign precursors diethylsilane and di-t-butylsilane were used with NH{sub 3} to synthesize silicon nitride films by plasma enhanced chemical vapor deposition. The growth kinetics and film properties were examined as a function of deposition temperature, total pressure, and NH{sub 3}/organosilane ratio. The growth rate was observed to decrease with higher temperature and higher NH{sub 3}/organosilane ratio while increasing with higher total pressure. Values of index of refraction, film stress, hardness, and Young`s modulus were measured as a function of processing variables and related to film density and resulting film composition. Oxidation of the films was noted to occur at high pressures, low temperatures, and low NH{sub 3}/organosilane ratios. Carbon incorporation was present for all deposits and appeared not to be dependent on processing conditions.

• OSTI ID: 106192
• Report Number(s): CONF-940411--; ISBN 1-55899-239-1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMMONIA
CHEMICAL REACTION KINETICS
CHEMICAL VAPOR DEPOSITION
EXPERIMENTAL DATA
MECHANICAL PROPERTIES
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
SILANES
SILICON NITRIDES
VAPOR DEPOSITED COATINGS