Control of selective tungsten chemical vapor deposition by monolayer nitridation of silicon surface

Journal Article · Thu Feb 01 04:00:00 EST 1996 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1836450· OSTI ID:212143

Takami, Seiichi; Saito, Takeyasu; Fujii, Minoru; Egashira, Yasuyuki; Komiyama, Hiroshi ^[1]

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1. Univ. of Tokyo (Japan). Dept. of Chemical System Engineering

Selective tungsten chemical vapor deposition was carried out on three kinds of substrates: hydrogen-terminated silicon (H-Si), monolayer nitrided silicon (N-Si), and thermally grown silicon oxide. X-ray photoelectron spectroscopy (XPS) confirmed that the H-Si substrates differ from the N-Si substrates only by the monolayer of nitride on their surface. Field-emission scanning electron spectroscopy and XPS showed that tungsten does not deposit on the N-Si substrates but does deposit on the H-Si substrates. Monolayer nitridation therefore has the potential for improving and optimizing the thin-film preparation processes, because it provides a means for altering the surface reactivity while keeping the bulk properties unchanged.

• Sponsoring Organization: USDOE
• OSTI ID: 212143
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 2 Vol. 143; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
CHEMICAL VAPOR DEPOSITION
COMPARATIVE EVALUATIONS
FABRICATION
INTEGRATED CIRCUITS
PROCESS CONTROL
SILICON
SUBSTRATES
SURFACE PROPERTIES
TUNGSTEN
VAPOR DEPOSITED COATINGS