Theoretical study of energy states of two-dimensional electron gas in pseudomorphically strained InAs HEMTs taking into account the non-parabolicity of the conduction band

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848444· OSTI ID:22261866

Nishio, Yui; Yamaguchi, Satoshi; Yamazaki, Youichi; Watanabe, Akira; Tange, Takahiro; Iida, Tsutomu; Takanashi, Yoshifumi ^[1]

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1. Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Tokyo University of Science 2641 Yamazaki, Noda, Chiba Pref., 278-8510 (Japan)

We determined rigorously the energy states of a two-dimensional electron gas (2DEG) in high electron mobility transistors (HEMTs) with a pseudomorphically strained InAs channel (InAs PHEMTs) taking into account the non-parabolicity of the conduction band for InAs. The sheet carrier concentration of 2DEG for the non-parabolic energy band was about 50% larger than that for the parabolic energy band and most of the electrons are confined strongly in the InAs layer. In addition, the threshold voltage for InAs PHEMTs was about 0.21 V lower than that for conventional InGaAs HEMTs.

• OSTI ID: 22261866
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC POTENTIAL
ELECTRON GAS
ELECTRON MOBILITY
GALLIUM ARSENIDES
INDIUM ARSENIDES