Characteristics of SiO{sub X} thin films deposited by atmospheric pressure chemical vapor deposition using a double-discharge system

Journal Article · Mon Oct 15 04:00:00 EDT 2012 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2012.04.124· OSTI ID:22215532

Park, Jaebeom ^[1]; Oh, Jongsik; Gil, Elly ^[2]

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1. SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Kyunggi-do 440-746 (Korea, Republic of)
2. Department of Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 440-746 (Korea, Republic of)

SiO{sub X} thin films were deposited using a gas mixture of hexamethyldisilazane (HMDS)/O{sub 2}/He/Ar from a remote-type dielectric barrier discharges (DBD) source, with/without the additional direct-type DBD just above the substrate (double discharge), and the effect of the double discharge on the characteristics of the SiO{sub X} thin film was investigated. The increase of HMDS flow rate and the decrease of oxygen flow rate in the gas mixture increased the SiO{sub X}-thin-film deposition rate. The improvement of the mechanical properties for SiO{sub X} film, in addition to the increase of deposition rate, is believed to be related not only to the higher gas dissociation because of the higher power deposition but also to the lesser recombination of oxygen atoms and dissociated HMDS due to the shorter diffusion length to the substrate.

• OSTI ID: 22215532
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 10 Vol. 47; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATMOSPHERIC PRESSURE
CHEMICAL VAPOR DEPOSITION
DEPOSITS
DIELECTRIC MATERIALS
DIFFUSION LENGTH
DISSOCIATION
INORGANIC COMPOUNDS
MECHANICAL PROPERTIES
SILICON OXIDES
SUBSTRATES
THIN FILMS