SiO{sub 2}-like film deposition by dielectric barrier discharge plasma gun at ambient temperature under an atmospheric pressure

Journal Article · Wed Nov 15 04:00:00 EST 2006 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2348724· OSTI ID:20853796

Qiang, Chen; Yuefei, Zhang; Erli, Han; Yuanjing, Ge ^[1]

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1. Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600 (China)

A medium-frequency dielectric barrier discharge (DBD) plasma gun was used to deposit SiO{sub 2}-like films at ambient temperature under atmospheric pressure. SiO{sub 2}-like films were deposited on Si and stainless-steel surfaces by flowing Ar gas containing hexamethyldisiloxane (HMDSO) monomer through the gun. The authors found that the chemical structure of the deposited SiO{sub 2}-like film strongly depended on the HMDSO monomer ratio in the flowing gas and on the incident power. Fourier transform infrared spectroscopy showed no hydroxyl group in the chemical structure under the low HMDSO ratio in flowing gas or high incident plasma power. Scanning electron microscopy and atomic force microscopy revealed that SiO{sub 2}-like films began to grow as islands and then formed in columns having porosity. Oxygen added to the plasma-gun flow plays a lesser role in the SiO{sub 2}-like deposition from a DBD plasma gun at atmospheric pressure, and the critical temperature for pure SiO{sub 2} formation is also greatly lowered.

• OSTI ID: 20853796
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 6 Vol. 24; ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMBIENT TEMPERATURE
ATMOSPHERIC PRESSURE
ATOMIC FORCE MICROSCOPY
CRITICAL TEMPERATURE
DEPOSITION
DEPOSITS
DIELECTRIC MATERIALS
ELECTRIC DISCHARGES
FOURIER TRANSFORM SPECTROMETERS
INFRARED SPECTRA
MONOMERS
ORGANIC SILICON COMPOUNDS
OXYGEN
PLASMA
PLASMA GUNS
SCANNING ELECTRON MICROSCOPY
SILICON OXIDES
STAINLESS STEELS
THIN FILMS