Deposition of silicon dioxide films using an atmospheric pressure microplasma jet

Journal Article · Wed Apr 15 04:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3108541· OSTI ID:21356099

Raballand, V; Benedikt, J; Hoffmann, S; Zimmermann, M; Keudell, A von ^[1]

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1. Research Group Reactive Plasmas, Ruhr-Universitaet Bochum, 44780 Bochum (Germany)

Organic and inorganic silicon dioxide films have been deposited by means of an atmospheric pressure microplasma jet. Tetramethylsilane (TMS), oxygen, and hexamethyldisiloxane (HMDSO) are injected into argon as plasma forming gases. In the case of TMS injection, inorganic films are deposited if an admixture of oxygen is used. In the case of HMDSO injection, inorganic films can be deposited at room temperature even without any oxygen admixture: at low HMDSO flow rates [<0.1 SCCM (SCCM denotes cubic centimeters per minute at STP),<32 ppm], the SiO{sub x}H{sub z} films contain no carbon and exhibit oxygen-to-silicon ratio close to 2 according to x-ray photoelectron spectroscopy. At high HMDSO flow rates (>0.1 SCCM,>32 ppm), SiO{sub x}C{sub y}H{sub z} with up to 21% of carbon are obtained. The transition from organic to inorganic film is confirmed by Fourier transform infrared spectroscopy. The deposition of inorganic SiO{sub 2} films from HMDSO without any oxygen admixture is explained by an ion-induced polymerization scheme of HMDSO.

• OSTI ID: 21356099
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARGON
ATMOSPHERIC PRESSURE
CARBON
CHALCOGENIDES
CHEMICAL REACTIONS
DEPOSITION
ELECTRON SPECTROSCOPY
ELEMENTS
FILMS
FLOW RATE
FLUIDS
FOURIER TRANSFORM SPECTROMETERS
FOURIER TRANSFORMATION
GASES
INFRARED SPECTRA
INTEGRAL TRANSFORMATIONS
MEASURING INSTRUMENTS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PLASMA JETS
POLYMERIZATION
RARE GASES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SPECTRA
SPECTROMETERS
SPECTROSCOPY
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRANSFORMATIONS
X-RAY PHOTOELECTRON SPECTROSCOPY