Surface reactions as carbon removal mechanism in deposition of silicon dioxide films at atmospheric pressure

Journal Article · Mon Mar 14 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3565965· OSTI ID:21518322

Reuter, R; Ellerweg, D; Keudell, A von; Benedikt, J ^[1]

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1. Research Department Plasmas with Complex Interactions, Ruhr-University Bochum, Universitaetsstr. 150, 44780 Bochum (Germany)

The deposition of thin SiO{sub x}C{sub y}H{sub z} or SiO{sub x}H{sub y} films by means of an atmospheric pressure microplasma jet with helium/hexamethyldisiloxane (HMDSO)/O{sub 2} mixtures and the surface reactions involving oxygen have been studied. It is shown, that the carbon content in the film can be controlled by choosing the right O{sub 2}/HMDSO ratio in the gas mixture. The microplasma jet geometry and localization of the deposition at a spot of few square millimeters allows studying the role of oxygen in the deposition process. This is done by alternating application of He/HMDSO plasma and He/O{sub 2} plasma to the same deposition area, here achieved by a treatment of a rotating substrate by two jets with above mentioned gas mixtures. It is shown that carbon-free SiO{sub x}H{sub y} film can be deposited in this way and that surface reaction with oxygen is the main loss mechanism of carbon from the film.

• OSTI ID: 21518322
• Journal Information: Applied Physics Letters, Vol. 98, Issue 11; Other Information: DOI: 10.1063/1.3565965; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ATMOSPHERIC PRESSURE
CARBON COMPOUNDS
DEPOSITION
HYDROGEN COMPOUNDS
MIXTURES
ORGANIC SILICON COMPOUNDS
OXYGEN
PLASMA
REMOVAL
SILICON OXIDES
SUBSTRATES
SURFACES
THIN FILMS
CHALCOGENIDES
DISPERSIONS
ELEMENTS
FILMS
NONMETALS
ORGANIC COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
SILICON COMPOUNDS