Effects of deposition conditions on gas-barrier performance of SiO{sub x}N{sub y} thin films formed via ion-beam-assisted vapor deposition
- Mitsubishi Heavy Industries, Ltd., Hiroshima R and D Center, 4-6-22 Kan-on-shin-machi, Nishi-ku, Hiroshima 733-8553 (Japan)
SiO{sub x}N{sub y} thin films were synthesized via ion-beam-assisted vapor deposition (IVD) where deposition of SiO{sub x} was irradiated by nitrogen ions. Firstly, reasonable-cost evaporation materials showing less splashing for the SiO{sub x} films were investigated by selecting appropriate sintering condition regimes of Si and SiO{sub 2} mixed powders. The SiO{sub x}N{sub y} thin films on a polyethylene terephtalate film substrate obtained via IVD showed a low oxygen transmission rate (OTR) of less than 1 cm{sup 3}/m{sup 2} day. Effective nitrogen ion irradiation energy per atom was 8 eV/at. or greater, which is consistent with regimes where densification of thin films is reported to occur. Higher N{sub 2} partial pressure yielded a lower OTR and a higher nitrogen atomic ratio of the films obtained. It is suggested that the improvement in gas-barrier performance resulted from densification and chemical change of the films due to energy addition and nitrification produced by nitrogen ion-beam irradiation.
- OSTI ID:
- 20777042
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 24, Issue 2; Other Information: DOI: 10.1116/1.2165659; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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