Characterization of RuO{sub 2} thin films prepared by hot-wall metallorganic chemical vapor deposition

Journal Article · Sat Mar 01 04:00:00 EST 1997 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1837530· OSTI ID:483797

Shin, W C; Yoon, S G ^[1]

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1. Chungnam National Univ., Taejon (Korea, Republic of). Dept. of Materials Engineering

RuO{sub 2} thin films were deposited on SiO{sub 2}/Si substrate at low temperatures by hot-wall metallorganic chemical vapor deposition using the ruthenocene and oxygen gas mixtures. The preferred orientation of films varied from (200) to (101) as the film thickness increases above 150 nm irrespective of the deposition conditions. RuO{sub 2} deposition reaction was controlled by gas-phase mass-transfer in these experiments. The film resistivity increased with increasing oxygen flow rates. The increase of film resistivity with increasing oxygen flow rates was due to the contribution of carrier concentration rather than that of carrier mobility. The thin resistivity with increasing the annealing temperatures decreased because of densification of films.

• Sponsoring Organization: USDOE
• OSTI ID: 483797
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 3 Vol. 144; ISSN JESOAN; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
ELECTRIC CONDUCTIVITY
MICROSTRUCTURE
PRECURSOR
RUTHENIUM OXIDES
SUBSTRATES