Growth, microstructure, and resistivity of RuO{sub 2} thin films grown by metal-organic chemical vapor deposition
- Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States)
- Physics Department, Northern Illinois University, DeKalb, Illinois 60115 (United States)
Polycrystalline RuO{sub 2} thin films were grown by metal-organic chemical vapor deposition (MOCVD) on both SiO{sub 2}/Si(001) and Pt/Ti/SiO{sub 2}/Si(001) substrates. Films having a controllable and reproducible structural texture and phase purity were synthesized by carefully controlling deposition parameters. Moderate growth temperatures ({approximately}350thinsp{degree}C) and low growth rates ({lt}30 {Angstrom}/min.) produced highly (110)-textured RuO{sub 2} films. Highly (101)-textured RuO{sub 2} films were favored at slightly lower temperatures ({approximately}300thinsp{degree}C) and much higher growth rates ({gt}30 {Angstrom}/min.). The most conductive RuO{sub 2} films had resistivities of 34 to 40 {mu}{Omega}-cm at 25thinsp{degree}C, an average grain size of 65{plus_minus}15thinspnm, and a surface roughness (rms) of 3 to 10 nm. Both single-phase Ru and mixed Ru/RuO{sub 2} phase material were also fabricated at low temperatures ({lt}350thinsp{degree}C) by using lower oxygen flow concentrations ({lt}10{percent}). {copyright} {ital 1998 Materials Research Society.}
- OSTI ID:
- 665035
- Journal Information:
- Journal of Materials Research, Vol. 13, Issue 8; Other Information: PBD: Aug 1998
- Country of Publication:
- United States
- Language:
- English
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