{ital In situ} growth of highly oriented Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} thin films by low-temperature metal{endash}organic chemical vapor deposition
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois60439 (United States)
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208 (United States)
Highly oriented, polycrystalline Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} (PZT) thin films were successfully grown on RuO{sub 2}/SiO{sub 2}/(001)Si using metal{endash}organic chemical vapor deposition (MOCVD) at 525{degree}C. The orientation of the PZT film was controlled by using MOCVD-deposited highly textured RuO{sub 2} bottom electrodes. A (001)-oriented PZT film was observed for growth on (101)-textured RuO{sub 2}. In contrast, for (110) RuO{sub 2}, the growth of (001) PZT was greatly suppressed while the growth of both (110) and (111) were enhanced, resulting in a poorly (001)-textured polycrystalline film. The as-grown PZT films exhibited a dense columnar microstructure with an average grain size of 150{endash}250 nm. Both PZT films showed excellent ferroelectric properties without any postgrowth annealing. The (001) highly oriented PZT films showed significantly higher values of remnant polarization (P{sub r}=49.7{mu}C/cm{sup 2}) and saturation polarization (P{sub s}=82.5{mu}C/cm{sup 2}). In comparison, for the PZT films grown on (110) RuO{sub 2}, P{sub r} and P{sub s} were 21.5 and 35.4{mu}C/cm{sup 2}, respectively. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 624841
- Journal Information:
- Applied Physics Letters, Vol. 72, Issue 13; Other Information: PBD: Mar 1998
- Country of Publication:
- United States
- Language:
- English
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