Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation
- Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395 (Japan)
Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 10{sup 20}/cm{sup 3} without generating significant crystal defects. Formation of a pn junction diode with an ideality factor of 1.06 is demonstrated.
- OSTI ID:
- 22162725
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 102; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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