Characterization of phosphorus implantation in 4H-SiC
- Rensselaer Polytechnic Inst., Troy, NY (United States). Center for Integrated Electronics and Electronics Manufacturing
- General Electric Corporate Research and Development, Schenectady, NY (United States)
Silicon carbide is expected to be a promising material for high-voltage semiconductor power devices. The authors report the characterization of phosphorus implantation in 4H-SiC. The implanted layers are characterized by analytical techniques (secondary ion mass spectrometry, transmission electron microscopy) as well as electrical and a sheet resistance value as low as 160 {Omega}/{open_square} has been measured. The authors have also studied the effect of annealing time and temperature on activation of phosphorus implants. It has been shown to be possible to obtain low sheet resistance ({approximately}260 {Omega}/{open_square}) by annealing at a temperature as low as 1,200 C. High-dose ({approximately} 4 {times} 10{sup 15} cm{sup {minus}2}) implants are found to have a higher sheet resistance than that on lower dose implants which is attributed to the near-surface depletion of the dopant during high temperature anneal. Different implantation dosages were utilized for the experiments and subsequently junction rectifiers were fabricated. Forward characteristics of these diodes are observed to obey a generalized Sah-Noyce-Shockly multiple level recombination model with four shallow levels and one deep level.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 345070
- Report Number(s):
- CONF-9806176--
- Journal Information:
- Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 3 Vol. 28; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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