Characterization of a n+3C/n−4H SiC heterojunction diode
- Department of Power Electronics, ABB Corporate Research Center, CH-5405 Baden-Dättwil (Switzerland)
- Semiconductor Materials, IFM, Linköping University, SE-58183 Linköping (Sweden)
- National Institute of Material Physics, R-077125 Bucharest-Măgurele (Romania)
- Semiconductor Physics Laboratory, KU Leuven, 3001 Leuven (Belgium)
- ABB Semiconductors, Fabrikstrasse 3, CH-5600 Lenzburg (Switzerland)
We report on the fabrication of n + 3C/n-4H SiC heterojunction diodes (HJDs) potentially promising the ultimate thermal stability of the junction. The diodes were systematically analyzed by TEM, X-ray diffraction, AFM, and secondary ion mass spectroscopy, indicating the formation of epitaxial 3C-SiC crystal on top of 4H-SiC substrate with continuous interface, low surface roughness, and up to ∼7 × 10{sup 17 }cm{sup −3} dopant impurity concentration. The conduction band off-set is about 1 V as extracted from CV measurements, while the valence bands of both SiC polytypes are aligned. The HJDs feature opening voltage of 1.65 V, consistent with the barrier height of about 1.5 eV extracted from CV measurement. We finally compare the electrical results of the n + 3C/n-4H SiC heterojunction diodes with those featuring Si and Ge doped anodes in order to evaluate current challenges involved in the fabrication of such devices.
- OSTI ID:
- 22591543
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 108; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
A Comparative Study of the Structure and Energetics of Elementary Defects in 3C- and 4H-SiC
Structures and Energetics of Defects: A Comparative Study of 3C- and 4H-SiC