Axial strain in GaAs/InAs core-shell nanowires

Journal Article · Mon Jan 28 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4790185· OSTI ID:22162701

Biermanns, Andreas; Pietsch, Ullrich ^[1]; Rieger, Torsten; Gruetzmacher, Detlev; Ion Lepsa, Mihail ^[2]; Bussone, Genziana ^[1]

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1. Universitaet Siegen, Festkoerperphysik, 57068 Siegen (Germany)
2. Peter Gruenberg Institute (PGI-9), Forschungszentrum, 52425 Juelich (Germany)

We study the axial strain relaxation in GaAs/InAs core-shell nanowire heterostructures grown by molecular beam epitaxy. Besides a gradual strain relaxation of the shell material, we find a significant strain in the GaAs core, increasing with shell thickness. This strain is explained by a saturation of the dislocation density at the core-shell interface. Independent measurements of core and shell lattice parameters by x-ray diffraction reveal a relaxation of 93% in a 35 nm thick InAs shell surrounding cores of 80 nm diameter. The compressive strain of -0.5% compared to bulk InAs is accompanied by a tensile strain up to 0.9% in the GaAs core.

• OSTI ID: 22162701
• Journal Information: Applied Physics Letters, Vol. 102, Issue 4; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
DEFORMATION
DENSITY
DISLOCATIONS
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
LATTICE PARAMETERS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
QUANTUM WIRES
RELAXATION
SATURATION
SEMICONDUCTOR MATERIALS
STRAINS
THICKNESS
X-RAY DIFFRACTION