Critical shell thickness for InAs-Al{sub x}In{sub 1-x}As(P) core-shell nanowires

Journal Article · Sat Dec 15 04:00:00 EST 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4769735· OSTI ID:22089661

Haapamaki, C. M.; LaPierre, R. R. ^[1]; Baugh, J. ^[2]

---

1. Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)
2. Institute for Quantum Computing and Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

InAs nanowires with Al{sub x}In{sub 1-x}P or Al{sub x}In{sub 1-x}As shells were grown on GaAs substrates by the Au-assisted vapour-liquid-solid method in a gas source molecular beam epitaxy system. Core diameters and shell thicknesses were measured by transmission electron microscopy (TEM). These measurements were then related to selected area diffraction patterns to verify either interface coherency or relaxation through misfit dislocations. A theoretical strain model is presented to determine the critical shell thickness for given core diameters. Zincblende stiffness parameters are transformed to their wurtzite counterparts via a well known tensor transformation. An energy criterion is then given to determine the shell thickness, at which coherency is lost and dislocations become favourable. Our model only considers axial strain relieved by edge dislocations since they were the only type of dislocation observed directly by TEM.

• OSTI ID: 22089661
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 112; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM COMPOUNDS
EDGE DISLOCATIONS
ELECTRON DIFFRACTION
FLEXIBILITY
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACES
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM WIRES
RELAXATION
SEMICONDUCTOR MATERIALS
SOLIDS
STRAINS
SUBSTRATES
THICKNESS
TRANSFORMATIONS
TRANSMISSION ELECTRON MICROSCOPY