Faster radial strain relaxation in InAs-GaAs core-shell heterowires
Journal Article
·
· Journal of Applied Physics
- Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6 (Canada)
- Centre for Advanced Nanotechnology, University of Toronto, 170 College Street, Toronto, Ontario M5S 3E4 (Canada)
- Mechanical Engineering and Design, Aston University, Aston Triangle, Birmingham B4 7ET (United Kingdom)
The structure of wurtzite and zinc blende InAs-GaAs (001) core-shell nanowires grown by molecular beam epitaxy on GaAs (001) substrates has been investigated by transmission electron microscopy. Heterowires with InAs core radii exceeding 11 nm, strain relax through the generation of misfit dislocations, given a GaAs shell thickness greater than 2.5 nm. Strain relaxation is larger in radial directions than axial, particularly for shell thicknesses greater than 5.0 nm, consistent with molecular statics calculations that predict a large shear stress concentration at each interface corner.
- OSTI ID:
- 22038866
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 111; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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