Transport and strain relaxation in wurtzite InAs-GaAs core-shell heterowires

Journal Article · Mon Apr 11 04:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3579251· OSTI ID:21518386

Kavanagh, Karen L ^[1]; Salfi, Joe; Savelyev, Igor; Blumin, Marina; Ruda, Harry E ^[2]

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1. Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6 (Canada)
2. Centre for Advanced Nanotechnology, University of Toronto, 170 College Street, Toronto, Ontario M5S 3E4 (Canada)

Indium-arsenide-gallium-arsenide (InAs-GaAs) core-shell, wurtzite nanowires have been grown on GaAs (001) substrates. The core-shell geometries (core radii 11 to 26 nm, shell thickness >2.5 nm) exceeded equilibrium critical values for strain relaxation via dislocations, apparent from transmission electron microscopy. Partial axial relaxation is detected in all nanowires increasing exponentially with size, while radial strain relaxation is >90%, but undetected in nanowires with both smaller core radii <16 nm and shell thicknesses <5 nm. Electrical measurements on individual core-shell nanowires show that the resulting dislocations are correlated with reduced electron field-effect mobility compared to bare InAs nanowires.

• OSTI ID: 21518386
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIMENSIONS
DISLOCATIONS
ELECTRON MICROSCOPY
ELECTRON MOBILITY
ELECTRONS
ELEMENTARY PARTICLES
EQUILIBRIUM
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LEPTONS
LINE DEFECTS
MATERIALS
MICROSCOPY
MOBILITY
NANOSTRUCTURES
PARTICLE MOBILITY
PNICTIDES
QUANTUM WIRES
RELAXATION
SEMICONDUCTOR MATERIALS
STRAINS
STRESS RELAXATION
SUBSTRATES
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY