Properties of epitaxial BaTiO{sub 3} deposited on GaAs

Journal Article · Mon Jan 07 04:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4773988· OSTI ID:22162663

Contreras-Guerrero, R.; Droopad, R. ^[1]; Veazey, J. P.; Levy, J. ^[2]

---

1. Department of Physics, Texas State University, 601 University Drive, San Marcos, Texas 78666 (United States)
2. Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 (United States)

Single crystal BaTiO{sub 3} (BTO) has been grown epitaxially on GaAs using molecular beam epitaxy with a 2 unit cell SrTiO{sub 3} nucleation layer. The oxide film is lattice-matched to GaAs through an in-plane rotation of 45 Degree-Sign relative to the (100) surface leading to c-axis orientation of the BaTiO{sub 3}. X-ray diffraction confirmed the crystallinity and orientation of the oxide film with a full width half maximum of 0.58 Degree-Sign for a 7.5 nm thick layer. Piezoresponse force microscopy was used to characterize the ferroelectric domains in the BaTiO{sub 3} layer, and a coercive voltage of 1-2 V and piezoresponse amplitude {approx}5 pm/V was measured.

• OSTI ID: 22162663
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 102; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMPLITUDES
BARIUM COMPOUNDS
CRYSTAL GROWTH
DEPOSITS
FERROELECTRIC MATERIALS
GALLIUM ARSENIDES
LAYERS
MICROSCOPY
MOLECULAR BEAM EPITAXY
NUCLEATION
OXIDES
PIEZOELECTRICITY
STRONTIUM TITANATES
SURFACES
THIN FILMS
TITANATES
X-RAY DIFFRACTION