Electrical properties of ferroelectric BaTiO{sub 3} thin film on SrTiO{sub 3} buffered GaAs by laser molecular beam epitaxy

Journal Article · Mon Jan 19 00:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3075955· OSTI ID:21175878

Huang, W; Wu, Z P; Hao, J H ^[1]

---

1. Department of Applied Physics and Materials Research Centre, Hong Kong Polytechnic University, Hong Kong (China)

Ferroelectric BaTiO{sub 3} thin films were epitaxially grown on (001) GaAs substrate using SrTiO{sub 3} as a buffer layer by laser molecular beam epitaxy. The perovskite SrTiO{sub 3} buffer layer present a body centered cubic structure by formation of an interfacial layer with the [100]SrTiO{sub 3} parallel [110]GaAs in-plane relationship. Thereupon, a highly c-oriented BaTiO{sub 3} thin film was grown on SrTiO{sub 3}/GaAs in a layer by layer mode. Enhanced electrical properties of the heteroepitaxial structure were demonstrated. The BaTiO{sub 3}(150 nm)/SrTiO{sub 3}/GaAs system demonstrates hysteresis loops with a remnant polarization of 2.5 {mu}C/cm{sup 2} at 600 kV/cm and a small leakage current density of 2.9x10{sup -7} A/cm{sup 2} at 200 kV/cm.

• OSTI ID: 21175878
• Journal Information: Applied Physics Letters, Vol. 94, Issue 3; Other Information: DOI: 10.1063/1.3075955; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM COMPOUNDS
BCC LATTICES
CRYSTAL GROWTH
CURRENT DENSITY
ELECTRICAL PROPERTIES
FERROELECTRIC MATERIALS
GALLIUM ARSENIDES
HYSTERESIS
LAYERS
LEAKAGE CURRENT
MOLECULAR BEAM EPITAXY
PEROVSKITE
POLARIZATION
SEMICONDUCTOR LASERS
STRONTIUM TITANATES
SUBSTRATES
THIN FILMS