High ferroelectric polarization in c-oriented BaTiO3 epitaxial thin films on SrTiO3/Si(001)

Scigaj, M.; Chao, C. H.; Gázquez, J.; Fina, I.; Moalla, R.; Saint-Girons, G.; Chisholm, M. F.; Herranz, G.; Fontcuberta, J.; Bachelet, R.; Sánchez, F.

doi:10.1063/1.4962836

High ferroelectric polarization in c-oriented BaTiO₃ epitaxial thin films on SrTiO₃/Si(001)

Journal Article · Wed Sep 21 04:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4962836· OSTI ID:1326550

Scigaj, M. ^[1]; Chao, C. H. ^[2]; Gázquez, J. ^[3]; Fina, I. ^[3]; Moalla, R. ^[4]; ^[4]; Chisholm, M. F. ^[5]; Herranz, G. ^[3]; Fontcuberta, J. ^[3]; Bachelet, R. ^[4]; ^[3]

Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Barcelona (Spain); Univ. Autonoma de Barcelona, Barcelona (Spain)
Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Barcelona (Spain); National Taipei Univ. of Technology (TAIPEI TECH), Taipei (Taiwan)
Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Barcelona (Spain)
Institut des Nanotechnologies de Lyon (INL), UMR CNRS, Ecole Centrale de Lyon, Ecully Cedex (France)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

The integration of epitaxial BaTiO₃ films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO₃/LaNiO₃/SrTiO₃ heterostructure is grown monolithically on Si(001). The BaTiO₃ films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm². Lastly, this result paves the way towards the fabrication of lead-free BaTiO₃ ferroelectric memories on silicon platforms.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1326550

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 109; ISSN APPLAB; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions Qian, Mengdi; Fina, Ignasi; Sánchez, Florencio Small, Vol. 15, Issue 11 https://doi.org/10.1002/smll.201805042	journal	February 2019
Epitaxial growth of (111) BaTiO3 thin films on (0002) GaN substrates with SrTiO3/TiN buffer layers Jia, Shasha; Li, Xiaomin; Li, Guanjie Journal of Materials Science: Materials in Electronics, Vol. 30, Issue 10 https://doi.org/10.1007/s10854-019-01310-3	journal	April 2019
Tailoring Lattice Strain and Ferroelectric Polarization of Epitaxial BaTiO3 Thin Films on Si(001) Lyu, Jike; Fina, Ignasi; Solanas, Raul Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-017-18842-5	journal	January 2018
Selectable texture in epitaxial ferroelectric BaTiO ₃ films integrated with silicon Lyu, Jike; Fina, Ignasi; Solanas, Raul CrystEngComm, Vol. 20, Issue 40 https://doi.org/10.1039/c8ce01093e	journal	January 2018
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Enhanced ferroelectricity in epitaxial Hf _0.5 Zr _0.5 O ₂ thin films integrated with Si(001) using SrTiO ₃ templates Lyu, J.; Fina, I.; Bachelet, R. Applied Physics Letters, Vol. 114, Issue 22 https://doi.org/10.1063/1.5096002	journal	June 2019

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