A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

Mazet, Lucie; Yang, Sang Mo; Kalinin, Sergei V.; Schamm-Chardon, Sylvie; Dubourdieu, Catherine

doi:10.1088/1468-6996/16/3/036005

Title: A review of molecular beam epitaxy of ferroelectric BaTiO₃ films on Si, Ge and GaAs substrates and their applications

Journal Article · Tue Jun 30 00:00:00 EDT 2015 · Science and Technology of Advanced Materials

DOI:https://doi.org/10.1088/1468-6996/16/3/036005· OSTI ID:1337832

Mazet, Lucie ^[1]; Yang, Sang Mo ^[2]; Kalinin, Sergei V. ^[2]; Schamm-Chardon, Sylvie ^[3]; Dubourdieu, Catherine ^[1]

Univ. de Lyon, Ecully (France)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Univ. de Toulouse, Toulouse (France)

SrTiO₃ epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO₃ on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Lastly, we review the last developments in two areas of interest for the applications of BaTiO₃ films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO₃, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1337832

Journal Information:: Science and Technology of Advanced Materials, Vol. 16, Issue 3; ISSN 1468-6996

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 78 works

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